Q:

Input Voltage between VIH and VOH is considered as:

A) Logic Input 1 B) Logic Input 0
C) Uncertain D) None of the mentioned
 
Answer & Explanation Answer: A) Logic Input 1

Explanation: Not available for this question

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

8
Q:

If VIH of the 2nd gate is lower than VOH of the 1st gate, then logic output 0 from the 1st gate is considered as:

A) Logic input 1 B) Uncertain
C) Logic input 0 D) None of the mentioned
 
Answer & Explanation Answer: A) Logic input 1

Explanation: Logic output 1 from first gate is considered as logic input 1 at second gate as it lies within the range.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

8
Q:

The average power of flicker noise depends on:

A) Thickness of oxide B) Cleanness of the oxide silicon interface
C) Voltage on oxide D) Length of channel
 
Answer & Explanation Answer: B) Cleanness of the oxide silicon interface

Explanation: Depending on the Cleanness of oxide silicon interface flicker noise varies.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

6
Q:

Flicker noise originates due to:

A) Conduction in channel B) Drain to Source voltage
C) Reduction in channel length D) Dangling bonds
 
Answer & Explanation Answer: D) Dangling bonds

Explanation: Dangling bonds generate flicker noise.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

9
Q:

Flicker noise is found in MOSFET at:

A) Gate and oxide interface B) Gate oxide and silicon interface
C) Source and substrate interface D) Drain and substrate interface
 
Answer & Explanation Answer: B) Gate oxide and silicon interface

Explanation: The interface between Gate oxide and silicon substrate generates flicker noise.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

9
Q:

Thermal noise current in the MOSFET is proportional to:

A) Transconductance B) Resistance
C) Gate voltage D) None of the mentioned
 
Answer & Explanation Answer: A) Transconductance

Explanation: Noise current I^2 = 4kTygm.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

9
Q:

Thermal noise is generated from MOSFET by:

A) Conduction of charge carriers in the channel B) Electric field across the gate and channel
C) Capacitance of the gate oxide D) Substrate bias effect
 
Answer & Explanation Answer: A) Conduction of charge carriers in the channel

Explanation: Thermal noise is generated due to conduction of charge carriers in the channel.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

9
Q:

Thermal noise is generated from:

A) Resistor B) Capacitor
C) Inductor D) All of the mentioned
 
Answer & Explanation Answer: A) Resistor

Explanation: Thermal noise is due to random motion of electrons in a conductor.

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Category: Electronics & Electrical MCQs
Sub Category: VLSI Mcqs

9